Samsung pushes GDDR4 speeds higher
by Geoff Gasior — 2:51 AM on February 15, 2006

Samsung has developed GDDR4 memory capable of transfer rates as high as 12.8GB/s. The 32-pin chips can push up to 3.2Gbps per pin, making them a little faster than the 2.9Gbps chips Hynix announced in December. Samsung used 80-nano process technology to build its new GDDR4 modules, which come in 512Mbit densities. However, there's no word on when the faster chips will begin sampling in volume.

   
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