A trio of semiconductor companies made up of IBM, Matronix, and Qimonda has developed a new, significantly faster type of Phase-change Random Access Memory, or PRAM. Samsung unveiled a PRAM prototype it said was capable of 30 times the performance of traditional flash memory two months ago. However, IBM, Matronix, and Qimonda say their PRAM is more than 500 times faster than flash and requires half the power to record data. The memory is built on a 20nm process.
Despite offering significantly faster performance, PRAM is similar to flash memory in that it's non-volatile and can retain data even if the host device is switched off. Unlike flash, though, PRAM can be written to an unlimited number of times. IBM and its partners may not introduce 20nm PRAM straight away, but Samsung has stated that it will start shipping PRAM in 2008.
|Biostar's Ryzen motherboards race toward release||47|
|TSUBAME3.0 gears up for AI supercomputing with 2160 Tesla P100s||25|
|Master of Shapes brings Vive tracking to Daydream VR||4|
|Deals of the week: Z270 motherboards, storage, and more||15|
|Phanteks Glacier gear flows into the water-cooling market||10|
|Display your graphics card with Thermaltake's PCIe riser cable||23|
|WWDC 2017 returns to its roots in San Jose||3|
|Unreal Engine 4.15 arrives with HDR and AFR support||60|
|MSI Aero ITX graphics cards put Pascal in petite places||5|