Samsung sampling 50nm flash memory

— 1:25 AM on January 3, 2007

Less than three months after announcing DDR2 memory chips based on 50nm process technology, Samsung has struck again, this time with 50nm flash memory. The company says it is now sampling 16Gb (2GB) NAND flash memory chips based on 50nm process technology with its customers, and that mass production of those chips will kick off later this quarter. Along with the smaller process, the chips also feature a multi-level cell (MLC) design with a 4KB page size. According to Samsung, the 4KB page size doubles read speed and increases write speed by 150% when compared with conventional MLC NAND flash memory chips that have 2KB page sizes. Thanks to these enhancements, Samsung believes its new 16Gb chips will help popularize devices like flash-based solid-state disks.

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