Mass production of 24-nm flash memory begins at Toshiba


— 11:43 AM on August 31, 2010

Add Toshiba to the growing list of flash memory providers who have upgraded to the next generation of fabrication technologies. The company has kicked off mass production of 24-nm MLC NAND. According to the official press release, the first chips rolling off the production line have two bits per cell and 64Gb of total capacity. Lower-density 32Gb chips are on the way, as well, and Toshiba will also produce three-bit-per-cell NAND using its 24-nano process.

Toshiba's new flash chips support Toggle DDR, a relatively new standard developed in cooperation with Samsung. First-gen Toggle DDR devices can push up to 133Mbps per pin—a substantial increase over "SDR" NAND, which Samsung says is limited to 40Mbps. Toggle DDR is an alternative to the ONFI specification backed by Intel, Micron, and Hynix, among others. ONFI is already into its second generation, which allows for "interface speeds" of 133-200MB/s. Unfortunately, the ONFI website doesn't provide per-pin data rates, and Toshiba doesn't quote an interface speed for its new Toggle DDR chips.

Of course, the solid-state disks that play host to this new NAND will be more interesting than the chips themselves. Drive partners aren't detailed in the press release, but we've seen Toshiba flash paired with one of the company's own controller chips in Kingston's SSDNow V+. That particular drive taps 128Gb flash chips built using 43-nano fabrication tech.

   
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