Samsung starts producing 2x-nm Toggle DDR 2.0 NAND chips

— 4:54 PM on May 12, 2011

Samsung has announced that it has begun production of the first flash memory chips built for the Toggle DDR 2.0 NAND standard. Backed primarily by Samsung and Toshiba, Toggle DDR is an alternative to the ONFI NAND interface used by Intel, Micron, and others. Toggle DDR 2.0 has a maximum data rate of 400Mbps, which is three times the speed of the first-gen spec. ONFI 3.0 promises the same data rate, although we haven't seen any compatible chips announced just yet.

Samsung doesn't say how much of Toggle DDR 2.0's available bandwidth is exploited by the company's new chips, but it has provided some other details. The chips are fabbed using a "20 nanometer class" process, and they each weigh in at 64Gb, or 8GB. That's for an individual flash die rather than the sort of multi-die chip you might find on an SSD. The Toggle DDR 1.0 chips Samsung uses in its 470 Series solid-state drive offer 16GB of capacity using an 8 x 2GB die configuration.

According to the press release, the Toggle DDR 2.0 chips are designed for use in solid-state drives, tablets, and smartphones. I suspect they'll spawn a new generation of Samsung SSDs, hopefully with an updated controller designed to take advantage of the faster interface. Thanks to Engadget for the tip.

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