New Samsung fab churns out 2x-nm memory


— 11:44 AM on September 23, 2011

If only real men have fabs, then Samsung is looking particularly masculine today. The company has kicked off production at Line-16, a new fabrication facility that has been under construction since May of last year. The facility totals nearly 200,000 square meters of floor space spread over a dozen stories, and Samsung claims it has the "largest production capacity" in the industry.

According to the official press release, DDR3 memory chips built on "20 nm class production technology" (emphasis ours) are already rolling off the line. Samsung isn't specific about exactly how many nanometers it's working with, but the firm does say the DRAM chips are the first to be produced using this class of process technology. The 2Gb chips are said to offer a 40% reduction in energy consumption over DRAM fabbed with 3x-nm process technology. Samsung expects to be cranking out chips with 4Gb capacities by the end of the year.

In addition to churning out cutting-edge DRAM memory, Line-16 will be tasked with flash production. 10,000 12-inch wafers loaded with NAND memory are expected to be generated by the facility every month. Like the DRAM chips, the NAND dies will be fabbed on a 2x-nm process.

   
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