GlobalFoundries adds a 12-nm node to its FD-SOI roadmap


— 10:00 AM on September 8, 2016

If you think of GlobalFoundries these days, you probably think about the company's 14-nm FinFET process and the AMD Polaris graphics cards fabricated on it. 14-nm FinFET is just one of several processes that GlobalFoundries offers, though. As just one example, the company also makes 22-nm planar transistors on a fully-depleted silicon-on-insulator technology—FD-SOI, or 22FDX in GloFo parlance.

The company claims 22FDX is well-suited for devices that need to balance high performance and low power consumption with low cost, especially products that need to combine radio-frequency, analog, memory, and logic devices onto the same chip. 22FDX has apparently been successful enough that GloFo is adding a new node to its FD-SOI roadmap today: 12-nm FD-SOI, or 12FDX.

GlobalFoundries says 12FDX can deliver the performance of 10-nm FinFET transistors with better power consumption characteristics and a lower cost than 16-nm FinFET devices. It also emphasizes that 12FDX is a full node shrink that delivers a "15% performance boost over today's FinFET technologies" and "as much as 50 percent lower power consumption." The company is preparing to produce 12-nm FD-SOI transistors at its Fab 1 facility in Dresden, Germany, and it expects that customers will begin taping out products on the new process node in the first half of 2019.

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