4GB Samsung DIMM uses through-silicon connections

Earlier this month, we learned that IBM was readying chips based on a "through-silicon via" interconnect. The interconnect links stacked chips via connections that are etched through the silicon wafer and filled with metal. DigiTimes now reports that Samsung is also working on through-silicon via interconnects, and that it has already produced a stacked DRAM package using the technology.

The package is made up of four 512Mb DDR2 memory chips, which add up to 2Gb (256MB) of memory. Samsung can produce a 4GB DDR2 memory module with 16 of those chips—eight on either side of the PCB. Stacking memory chips to reach higher capacities isn't particularly new, but DigiTimes points out that conventional stacking techniques connect memory chips with wires, thus requiring extra vertical and horizontal spacing between dies. By using through-silicon via interconnects, Samsung's "wafer-level-processed stack package" allows the Korean firm to squeeze the same amount of memory into a smaller, thinner package.

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