Samsung has had great success in the SSD market with its 3D V-NAND flash memory. Now, the conglomerate is combining that technology with a new memory controller to mass-produce 256GB embedded flash chips that use the high-performance Universal Flash Storage (UFS) 2.0 standard.
Samsung says the new 256GB memory package handles up to 45K input-output operations per second (IOPS) for random reads, and 40K IOPS for random writes. That's more than double the performance of the company's previous-generation part. For sequential reads, the memory can move data at up to 850MB/s, and it enables sequential writes of up to 260MB/s.
For a couple examples of what the new memory is capable of, Samsung says a phone with a UFS 2.0 chip inside can support 4K video playback while writing to the drive or performing a file-system search at the same time. The company also says that phones with UFS 2.0 and a USB 3.0 port will be able to transfer a 5GB 1080p movie file in about 12 seconds.
UFS is a next-generation flash storage specification aimed primarily at mobile devices like smartphones and digital cameras. It boasts a number of advantages over the more common eMMC standard, including significantly increased speeds and lower power consumption. Samsung started manufacturing UFS 2.0 memory in capacities of up to 128GB early last year.