Samsung readies DDR3 for second half of 2006

At the Intel Developer Forum (IDF) in Taipei earlier this week, HKEPC (in Chinese, translate here) learned that Samsung plans to begin production of DDR3 memory in the second half of this year. Samsung product manager and JEDEC chairman Dong Yang Lee is quoted as saying that early DDR3 samples will be clocked at an effective 800MHz, with 1,066MHz and 1,333MHz modules to follow in an undisclosed time frame. DDR3 is expected to scale up to 1,666MHz, thanks in part to its 8-bit prefetch, which will allow it to run at half the clock speed of DDR2 for the same effective bandwidth. DDR3 modules will thus only require a default voltage of 1.5V—down from DDR2's 1.8V and DDR's 2.5V—cutting power draw significantly. IDF slides photographed by HKEPC claim DDR3-1066 and DDR3-1333 Unregistered DIMMs based on 70nm process technology have respective 40% and 29% lower power draw than current 90nm DDR2-800 modules. Intel only plans to move to DDR3 in the second half of 2007, however, and HKEPC says mainstream adoption isn't expected until early 2009.
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